q?v~zy??q?v?_ra]q{??qcabgq HRLE320N03K absolute maximum ratings t a =25 e unless otherwise specified symbol parameter value units v dss drain-source voltage 30 v v gs gate-source voltage 20 v i d drain current t a = 25 e 5 a t a = 70 e 4 a i dm pulsed drain current 20 a p d power dissipation t a = 25 e 1.4 w t a = 70 e 0.9 w t j , t stg operating and storage temperature range -55 to +150 e thermal resistance characteristics symbol parameter typ. max. units r ja junction-to-ambient (t ? 10s) -- 90 e /w ? low dense cell design ? reliable and rugged ? advanced trench process technology sot-23 parameter value unit bv dss 30 v i d 5a r ds(on), typ @10v 27 p
r ds(on), typ @4.5v 33 p
key parameters package & internal circuit HRLE320N03K 30v n-channel trench mosfet features application ? power management in inverter system ? synchronous rectification g d s jan 2016
q?v~zy??q?v?_ra]q{??qcabgq HRLE320N03K electrical characteristics t j =25 q c unless otherwise specified symbol parameter test conditions min typ max units i s continuous source-drain diode forward current -- -- 5 a i sm pulsed source-drain diode forward current -- -- 20 v sd source-drain diode forward voltage i s = 3 a, v gs = 0 v -- -- 1.3 v trr reverse recovery time i s = 5 a, v gs = 0 v di f /dt = 100 a/ v -- 10 -- qrr reverse recovery charge -- 2.5 -- nc on characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 3 30 -- -- v i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v -- -- 1 3 v ds = 24 v, t j = 55 e -- -- 5 3 i gss gate-body leakage current v gs = 20 v, v ds = 0 v -- -- 100 2 off characteristics c iss input capacitance v ds = 15 v, v gs = 0 v, f = 1.0 mhz -- 450 -- ? c oss output capacitance -- 62 -- ? c rss reverse transfer capacitance -- 50 -- ? r g gate resistance v gs = 0 v, v ds = 0 v, f = 1mhz -- 2.5 -- ? dynamic characteristics t d(on) turn-on time v ds = 15 v, i d = 5 a, r g = 6 ? -- 15 -- t r turn-on rise time -- 9 -- t d(off) turn-off delay time -- 31 -- t f turn-off fall time -- 12 -- q g(10v) total gate charge v ds = 15 v, i d = 5 a, v gs = 10 v -- 8.5 11 nc q g(4.5v) -- 4.0 5.2 nc q gs gate-source charge -- 1.0 -- nc q gd gate-drain charge -- 1.5 -- nc switching characteristics source-drain diode maximum ratings and characteristics v gs gate threshold voltage v ds = v gs , i d = 250 3 1.0 -- 3.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 5 a -- 27 32 m ? v gs = 4.5 v, i d = 4 a -- 33 40 m ? g fs forward transconductance v ds = 5, i d = 5 a -- 15 -- s
q?v~zy??q?v?_ra]q{??qcabgq HRLE320N03K typical characteristics figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figur e 6. gate charge characteristics 0246810 0 2 4 6 8 10 12 v ds = 15 v i d = 5 a v gs , gate-source voltage [v] q g , total gate charge [nc] 0 3 6 9 12 15 10 20 30 40 50 60 v gs = 4.5v
note : t j = 25 o c r ds(on) [m : ], drain-source on-resistance i d , drain current [a] v gs = 10v 0.0 0.4 0.8 1.2 1.6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 25 o c * notes : 1. v gs = 0v 2. 300us pulse test v sd , source-drain voltage [v] i dr , reverse drain current [a] 125 o c 012345 0 10 20 30 v gs top : 10 v 7 v 4.5 v 4 v 3.5 v bottom : 3 v * notes : 1. 300us pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 012345 0 5 10 15 t j =25 o c * notes : 1. v ds = 5v 2. 300us pulse test v gs , gate-source voltage [v] i d , drain current [a] 0 5 10 15 20 25 30 0 100 200 300 400 500 600 700 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v]
q?v~zy??q?v?_ra]q{??qcabgq HRLE320N03K typical characteristics (continued) figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve t 2 t 1 p dm 10 -2 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 100 ms 10 s 10 ms dc 1 ms 100 us operation in this area is limited by r ds(on) * notes : 1. t a = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 1 2 3 4 5 i d , drain current [a] t c , case temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2
note : 1. v gs = 0 v 2. i d = 250 p a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0
note : 1. v gs = 10 v 2. i d = 5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 * notes : 1. r t ja = 90 o c/w max. 2. duty factor, d=t 1 /t 2 3. t j,pk = p dm x z t ja x r t ja + t a single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z t ja , normalized transient thermal response t 1 , square wave pulse duration [sec]
q?v~zy??q?v?_ra]q{??qcabgq HRLE320N03K fig 12. gate charge test circuit & waveform fig 13. resistive switching test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms e as =l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss v in v ds 10% 90% t d(on) t r t on t off t d(off) t f charge v gs 10v q g q gs q gd v dd v ds bv dss t p v dd i as v ds (t) i d (t) time v dd ( 0.5 rated v ds ) 10v v ds r l dut r g 3ma v gs dut v ds 300nf .
200nf 12v same type as dut 10v dut r g l i d
q?v~zy??q?v?_ra]q{??qcabgq HRLE320N03K fig 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i s controlled by pulse period v dd l i s 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period --------------------------
q?v~zy??q?v?_ra]q{??qcabgq HRLE320N03K package dimension & marking information z v { t y z g
|
